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Description Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
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Brand: Nexperia
Packaging TO-236
Delivery time
Packaging method
Standard packaging quantity 1
1.7  yuan 1.7yuan
5+:
$ 2.3004
25+:
$ 2.1300
50+:
$ 2.0107
100+:
$ 1.9596
500+:
$ 1.9255
2500+:
$ 1.8829
5000+:
$ 1.8659
10000+:
$ 1.8403
Quantity
5+
25+
50+
100+
500+
Price
$2.3004
$2.1300
$2.0107
$1.9596
$1.9255
Price $ 2.3004 $ 2.1300 $ 2.0107 $ 1.9596 $ 1.9255
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4955) Minimum order quantity(5)
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Technical parameters/minimum current amplification factor (hFE): 200

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 250 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/length: 3 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1 mm

External dimensions/packaging: TO-236

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards:

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