Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 完全替代 | TO-226-3，TO-92-3（TO-226AA）成形引线 |
Trans GP BJT NPN 30V 0.6A 3Pin TO-92 Ammo
|
||
PN2222TAR
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 30V 0.6A 3Pin TO-92 Ammo
|
||
PN2222TF
|
ON Semiconductor | 类似代替 | TO-226-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
PN2222_J61Z
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 30V 0.6A 3Pin TO-92 Bulk
|
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