Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 150 @1mA, 10V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PN3565
|
ON Semiconductor | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
PN3565
|
Central Semiconductor | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
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