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Model PN2907A,126
Description Bipolar Transistor Bipolar Junction Transistor (BJT) TRANS SW AMMO WIDE PITCH
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Brand: NXP
Packaging TO-226-3
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Packaging method Tape & Box (TB)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7900) Minimum order quantity(1)
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Technical parameters/polarity: PNP

Technical parameters/dissipated power: 500 mW

Technical parameters/gain bandwidth product: 200 MHz

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/maximum allowable collector current: 0.6A

Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V

Technical parameters/rated power (Max): 500 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 500 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/length: 4.8 mm

External dimensions/width: 4.2 mm

External dimensions/height: 5.2 mm

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Box (TB)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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