Technical parameters/drain source resistance: 60 Ω
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 14pF @20V(Vds)
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PN4392
|
VISHAY | 功能相似 | TO-92 |
PN4392 Series 40V 25mA Through Hole N-Channel Silicon JFET - TO-92-3
|
||
PN4392
|
Vishay Semiconductor | 功能相似 | TO-92 |
PN4392 Series 40V 25mA Through Hole N-Channel Silicon JFET - TO-92-3
|
||
|
|
Calogic | 功能相似 | TO-92 |
PN4392 Series 40V 25mA Through Hole N-Channel Silicon JFET - TO-92-3
|
||
|
|
Central Semiconductor | 功能相似 | TO-92 |
PN4392 Series 40V 25mA Through Hole N-Channel Silicon JFET - TO-92-3
|
||
|
|
Linear Integrated System | 功能相似 | TO-92 |
PN4392 Series 40V 25mA Through Hole N-Channel Silicon JFET - TO-92-3
|
||
PN4392
|
ON Semiconductor | 功能相似 | TO-226-3 |
PN4392 Series 40V 25mA Through Hole N-Channel Silicon JFET - TO-92-3
|
||
|
|
Vishay Intertechnology | 功能相似 | TO-92 |
Transistor
|
||
PN4392-E3
|
Vishay Semiconductor | 功能相似 | TO-92 |
Transistor
|
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