Technical parameters/dissipated power: 350 mW
Technical parameters/input capacitance: 2pF (Max)
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/gain: 15 dB
Technical parameters/minimum current amplification factor (hFE): 20 @3mA, 1V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PN918
|
Fairchild | 功能相似 | TO-226-3 |
NPN晶体管RF NPN RF Transistor
|
||
PN918
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN晶体管RF NPN RF Transistor
|
||
PN918
|
ROHM Semiconductor | 功能相似 | TO-92 |
NPN晶体管RF NPN RF Transistor
|
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