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Model IPP65R310CFD
Description 650VCoolMOS C6 CFD Power Transistor 650V CoolMOS C6 CFD Power Transistor
Product QR code
Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
11.06  yuan 11.06yuan
5+:
$ 12.9355
50+:
$ 12.3827
200+:
$ 12.0732
500+:
$ 11.9958
1000+:
$ 11.9184
2500+:
$ 11.8299
5000+:
$ 11.7746
7500+:
$ 11.7194
Quantity
5+
50+
200+
500+
1000+
Price
$12.9355
$12.3827
$12.0732
$11.9958
$11.9184
Price $ 12.9355 $ 12.3827 $ 12.0732 $ 11.9958 $ 11.9184
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2920) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 280 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 104.2 W

Technical parameters/threshold voltage: 3.5 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 650 V

Technical parameters/Continuous drain current (Ids): 11.4A

Technical parameters/rise time: 7.5 ns

Technical parameters/Input capacitance (Ciss): 1100pF @100V(Vds)

Technical parameters/rated power (Max): 104.2 W

Technical parameters/descent time: 7 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 104.2W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10 mm

External dimensions/width: 4.4 mm

External dimensions/height: 15.65 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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