Technical parameters/rise/fall time: 3µs, 5µs
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.17 V
Technical parameters/dissipated power: 0.15 W
Technical parameters/rise time: 3 µs
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 80 mA
Technical parameters/output voltage (Max): 80 V
Technical parameters/input current (Min): 80 mA
Technical parameters/breakdown voltage: 6 V
Technical parameters/forward voltage (Max): 1.4 V
Technical parameters/forward current (Max): 80 mA
Technical parameters/descent time: 5 µs
Technical parameters/operating temperature (Max): 100 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: PDIP-4
External dimensions/packaging: PDIP-4
Physical parameters/operating temperature: -55℃ ~ 100℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PS2561L-1-A
|
California Eastern Laboratories | 类似代替 | PDIP-4 |
80 V 5000 Vrms 80 % 表面贴装 光电耦合器 - DIP-4
|
||
PS2561L-1-E3-A
|
California Eastern Laboratories | 功能相似 | SMD-4 |
晶体管输出光电耦合器 Hi-Iso Photo 1-Ch
|
||
PS2561L-1-E3-A
|
NEC | 功能相似 | DIP |
晶体管输出光电耦合器 Hi-Iso Photo 1-Ch
|
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