Technical parameters/output current: 8 mA
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.7 V
Technical parameters/dissipated power: 100 mW
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 25 mA
Technical parameters/output voltage (Max): 35 V
Technical parameters/operating temperature (Max): 100 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/length: 9.25 mm
External dimensions/width: 6.5 mm
External dimensions/height: 3.5 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -55℃ ~ 100℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PS8502L3-E3-AX
|
Renesas Electronics | 类似代替 | DIP |
Optocoupler DC-IN 1CH Transistor With Base DC-OUT 8Pin PDIP SMD T/R
|
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