Technical parameters/rise/fall time: 50 ns
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.56 V
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 25 mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 110℃
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Renesas Electronics | 功能相似 | SDIP |
PS9305 系列 单通道 30 V 5 kVrms 2.5 A 表面贴装 IGBT 光电耦合器 - DIP-8
|
||
PS9305L-AX
|
California Eastern Laboratories | 功能相似 | SOIC-8 |
PS9305 系列 单通道 30 V 5 kVrms 2.5 A 表面贴装 IGBT 光电耦合器 - DIP-8
|
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