Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 4.00 mA
Technical parameters/dissipated power: 350000 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 60 @4mA, 10V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 |
Transistor,
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|||
|
|
Siemens AG | 类似代替 | SOT-23 |
BFS17P NPN三极管 25V 25mA 2.5GHz 20~150 400mV/0.4V SOT-23/SC-59 marking/标记 MC 宽带放大器
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||
BFS17P
|
Infineon | 类似代替 | SOT-23 |
BFS17P NPN三极管 25V 25mA 2.5GHz 20~150 400mV/0.4V SOT-23/SC-59 marking/标记 MC 宽带放大器
|
||
MMBT918
|
Fairchild | 功能相似 | SOT-23-3 |
t-Npn Si- Vhf
|
||
|
|
Panjit | 功能相似 | SOT-23 |
t-Npn Si- Vhf
|
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