Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 103 W
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/Input capacitance (Ciss): 1573pF @40V(Vds)
Technical parameters/rated power (Max): 103 W
Technical parameters/dissipated power (Max): 103W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75542P3
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HUF75542P3.. 晶体管, MOSFET, N沟道, 75 A, 80 V, 14 mohm, 10 V, 4 V
|
|||
|
HUF75545P3
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR HUF75545P3 晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
|
||
HUF75545P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75545P3 晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
|
||
STP40NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP40NF10 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
|
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