Technical parameters/dissipated power: 250 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/rise time: 71 ns
Technical parameters/Input capacitance (Ciss): 3680pF @25V(Vds)
Technical parameters/rated power (Max): 250 W
Technical parameters/descent time: 76 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.3 mm
External dimensions/width: 9.4 mm
External dimensions/height: 4.5 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN030-150B
|
Philips | 功能相似 |
Power Field-Effect Transistor
|
|||
PSMN030-150B,118
|
Nexperia | 类似代替 | TO-263-3 |
D2PAK N-CH 150V 55.5A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review