Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 39A
Encapsulation parameters/Encapsulation: SOT-78
External dimensions/packaging: SOT-78
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN057-200P
|
NXP | 功能相似 | SOT-78 |
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
|
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