Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.00079 Ω
Technical parameters/dissipated power: 238 W
Technical parameters/threshold voltage: 1.75 V
Technical parameters/input capacitance: 5732 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 44.4 ns
Technical parameters/Input capacitance (Ciss): 8598pF @15V(Vds)
Technical parameters/rated power (Max): 238 W
Technical parameters/descent time: 31.7 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 238W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/length: 5 mm
External dimensions/packaging: SOT-669
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Multimedia, Motor Drive and Control, Communication and Networking, Computers and Computer Peripherals, Power Management, Industrial, Medical
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN1R2-30YLC,115
|
Nexperia | 类似代替 | SOT-669 |
Nexperia Si N沟道 MOSFET PSMN1R2-30YLC,115, 100 A, Vds=30 V, 4引脚 SOT-669封装
|
||
PSMN2R0-30YLE,115
|
NXP | 类似代替 | SOT-669-4 |
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0017 ohm, 10 V, 1.7 V
|
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