Technical parameters/dissipated power: 230 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 180 ns
Technical parameters/Input capacitance (Ciss): 6500pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/descent time: 253 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640B
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Fairchild | 功能相似 | TO-220 |
200V N沟道MOSFET 200V N-Channel MOSFET
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IRL1404ZPBF
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INFINEON IRL1404ZPBF 晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V
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IRL1404ZPBF
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IFA | 功能相似 |
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