Technical parameters/dissipated power: 270W (Tc)
Technical parameters/input capacitance: 6793 pF
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 6793pF @12V(Vds)
Technical parameters/rated power (Max): 270 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 270W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75542P3
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HUF75542P3.. 晶体管, MOSFET, N沟道, 75 A, 80 V, 14 mohm, 10 V, 4 V
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HUF75545P3
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR HUF75545P3 晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
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HUF75545P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75545P3 晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
|
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