Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.0056 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 306 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 46 ns
Technical parameters/Input capacitance (Ciss): 8061pF @50V(Vds)
Technical parameters/rated power (Max): 306 W
Technical parameters/descent time: 34 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 306W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.7 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP120NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP120NF10 晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
|
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