Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.00182 Ω
Technical parameters/dissipated power: 115 W
Technical parameters/threshold voltage: 1.68 V
Technical parameters/input capacitance: 2485 pF
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/rise time: 18.7 ns
Technical parameters/Input capacitance (Ciss): 2485pF @12V(Vds)
Technical parameters/descent time: 12.4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 115W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/packaging: SOT-669
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN0R9-25YLC,115
|
NXP | 功能相似 | SOT-669 |
Nexperia Si N沟道 MOSFET PSMN0R9-25YLC,115, 100 A, Vds=25 V, 4引脚 SOT-669封装
|
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