Technical parameters/rated power: 125 mW
Technical parameters/resistance: 200 Ω
Technical parameters/resistance deviation: ±1 %
Technical parameters/rated voltage: 200 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: Axial Leaded
External dimensions/length: 7.06 mm
External dimensions/packaging: Axial Leaded
Physical parameters/temperature coefficient: ±100 ppm/℃
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RN55D2000F
|
KOA Speer | 类似代替 |
INTERNATIONAL RESISTIVE RN55D2000F 金属釉面电阻, 200Ω, 125mW, 1%
|
|||
RN55D2000F
|
International Resistive | 类似代替 | Axial Leaded |
INTERNATIONAL RESISTIVE RN55D2000F 金属釉面电阻, 200Ω, 125mW, 1%
|
||
|
|
Vishay Dale | 功能相似 |
Res Metal Film 200Ω 1% 0.125W(1/8W) ±100ppm/℃ Conformal AXL Thru-Hole T/R
|
|||
|
|
VISHAY | 功能相似 | Axial |
Res Metal Film 200Ω 1% 0.125W(1/8W) ±100ppm/℃ Conformal AXL Thru-Hole T/R
|
||
RN55D2000FR36
|
Vishay Semiconductor | 功能相似 |
Res Metal Film 200Ω 1% 0.125W(1/8W) ±100ppm/℃ Conformal AXL Thru-Hole T/R
|
|||
|
|
VISHAY | 完全替代 | Axial Leaded |
VISHAY RN55D2000FRE6 金属膜电阻, 200Ω, 125mW, ±1%
|
||
RN55D2000FRE6
|
Vishay Semiconductor | 完全替代 | Axial Leaded |
VISHAY RN55D2000FRE6 金属膜电阻, 200Ω, 125mW, ±1%
|
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