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Encapsulation parameters/Encapsulation: -
External dimensions/packaging: -
Other/Gate Voltage Vgs: 2.5V@1mA
Other/Vgs (maximum value): ±20V
Other/continuous drain current Id: 26A(Ta),80A(Tc)
Other/drain source voltage Vds: 30V
Other/Gate Charge Qg: 175nC@10V
Other/RdsOn (Max) @ Id, Vgs: 3.1mOhm@26A,10V
Other/working temperature: 150℃(TJ)
Other/Packaging/Shell: 8-HSOP
Other/FET types: P-Channel
Other/Pd - power dissipation (Max): 3W(Ta)
Compliant with standards/RoHS standards: RoHS Compliant
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