Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 75 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 20 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 17.5A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 950pF @25V(Vds)
Technical parameters/rated power (Max): 20 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 20W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RD3P175SNTL1
|
ROHM Semiconductor | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
|
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