Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 10.7 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 1300pF @10V(Vds)
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/length: 5 mm
External dimensions/width: 4.4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOP-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RSS110N03TB
|
ROHM Semiconductor | 功能相似 | SOIC-8 |
SOP N-CH 30V 11A
|
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