Technical parameters/drain source resistance: 250 mΩ
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 45 V
Technical parameters/rise time: 16 ns
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TSMT
External dimensions/packaging: TSMT
Other/Packaging Methods: Cut Tape (CT)
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RQ5H020TNTL
|
ROHM Semiconductor | 功能相似 | SOT-346 |
晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V
|
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