Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.048 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 45 V
Technical parameters/Continuous drain current (Ids): 3A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 510pF @10V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RQ5H025TNTL
|
ROHM Semiconductor | 功能相似 | SOT-346 |
N 通道 MOSFET 晶体管，ROHM ### MOSFET 晶体管，ROHM Semiconductor
|
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