Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.6 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 0.2 W
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 0.2A
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 25pF @10V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.1 mm
External dimensions/width: 1.5 mm
External dimensions/height: 1.15 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RUM002N05T2L
|
ROHM Semiconductor | 功能相似 | SOT-723 |
N 通道 MOSFET 晶体管,ROHM ### MOSFET 晶体管,ROHM Semiconductor
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||
|
|
Ricoh | 完全替代 |
MOS场效应管 RUU002N05T106 SC-70(SOT-323)
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|||
RUU002N05T106
|
ROHM Semiconductor | 完全替代 | SOT-323 |
MOS场效应管 RUU002N05T106 SC-70(SOT-323)
|
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