Technical parameters/reverse recovery time: 60 ns
Technical parameters/forward current (Max): 6 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 50000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RURD660S
|
ON Semiconductor | 功能相似 | TO-252 |
6A , 600V超快二极管 6A, 600V Ultrafast Diodes
|
||
RURD660S
|
Intersil | 功能相似 |
6A , 600V超快二极管 6A, 600V Ultrafast Diodes
|
|||
|
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR RURD660S9A 快速/超快功率二极管, 单, 600 V, 6 A, 1.5 V, 60 ns, 60 A
|
|||
RURD660S9A
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR RURD660S9A 快速/超快功率二极管, 单, 600 V, 6 A, 1.5 V, 60 ns, 60 A
|
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