Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 55 mΩ
Technical parameters/dissipated power: 700 mW
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 480pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 700mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-563-6
External dimensions/packaging: SOT-563-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RRL025P03TR
|
ROHM Semiconductor | 功能相似 | SOT-363-6 |
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.055 ohm, -10 V, -2.5 V
|
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