Technical parameters/drain source resistance: 0.042 Ω
Technical parameters/polarity: N
Technical parameters/dissipated power: 40 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 45A
Technical parameters/rise time: 210 ns
Technical parameters/Input capacitance (Ciss): 4200pF @25V(Vds)
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.23W (Ta), 40W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review