Technical parameters/reverse recovery time: 35 ns
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/forward voltage (Max): 1.25 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AC
External dimensions/packaging: DO-214AC
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ES1G
|
Vishay Semiconductor | 功能相似 | DO-214AC |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
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|
|
Surge Components | 功能相似 | DO-214AC |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
||
|
|
PINGWEI | 功能相似 | DO-214AC |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
||
ES1G
|
Surge | 功能相似 |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
|||
ES1G
|
ChendaHang | 功能相似 |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
|||
ES1G
|
Taiwan Semiconductor | 功能相似 | DO-214AC-2 |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
||
ES1G
|
LiteOn | 功能相似 | DO-214AC |
FAIRCHILD SEMICONDUCTOR ES1G. 二极管, 快速恢复型, 1A, 400V, DO-214AC
|
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