Technical parameters/power supply voltage (DC): 2.70V (min)
Technical parameters/power supply current: 110 mA
Technical parameters/number of pins: 64
Technical parameters/digits: 8, 16
Technical parameters/access time: 110 ns
Technical parameters/memory capacity: 16000000 B
Technical parameters/access time (Max): 110 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 3V, 3.3V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 64
Encapsulation parameters/Encapsulation: BGA-64
External dimensions/packaging: BGA-64
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: 3A991.b.1.a
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S29GL128P11FFI020
|
Cypress Semiconductor | 完全替代 | BGA-64 |
S29GL128P 系列 128 Mb (16M x 8) 3 V 110 ns 闪存-NOR 存储器 - BGA-64
|
||
S29GL128P11FFIV10
|
Spansion | 完全替代 | FBGA-64 |
闪存, MirrorBit架构, 并行NOR, 128 Mbit, 16M x 8位, CFI, 并行, FBGA, 64 引脚
|
||
|
|
Spansion | 完全替代 | LBGA |
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 110ns 64Pin Fortified BGA T/R
|
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