Technical parameters/forward voltage: 600mV @3A
Technical parameters/forward current: 4 A
Technical parameters/Maximum forward surge current (Ifsm): 40 A
Technical parameters/forward voltage (Max): 600mV @3A
Technical parameters/forward current (Max): 8 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SB80W06T-H
|
ON Semiconductor | 功能相似 | TO-251-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 60V V(RRM), Silicon, TO-251, SC-64, DPAK-3
|
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