Technical parameters/rated voltage (DC): 70.0 V
Technical parameters/capacitors: 2.00 pF
Technical parameters/rated power: 350 mW
Technical parameters/breakdown voltage: 85.0 V
Technical parameters/number of pins: 3
Technical parameters/forward voltage: 1.25 V
Technical parameters/reverse recovery time: 1.5 µs
Technical parameters/forward current: 200 mA
Technical parameters/Maximum forward surge current (Ifsm): 4.5 A
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/forward current (Max): 200 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Consumer Electronics, Industrial, Automotive, Portable Devices
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAV199LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BAV199LT1G 二极管 小信号, 单对串联, 70 V, 215 mA, 1.25 V, 3 µs, 500 mA
|
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