Technical parameters/dissipated power: 183 W
Technical parameters/minimum current amplification factor (hFE): 10
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/Encapsulation: M113
External dimensions/packaging: M113
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VLB70-12F
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, Very High Frequency Band, Silicon, NPN, 0.38INCH, FM-4
|
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