Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 3.00 A
Technical parameters/dissipated power: 30 W
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 30 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.1 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTD3N60C3S9A
|
ON Semiconductor | 类似代替 | TO-252-3 |
6A , 600V , UFS系列N沟道IGBT的 6A, 600V, UFS Series N-Channel IGBTs
|
||
SGR
|
Fairchild | 功能相似 | D-PAK |
Discrete, High Performance IGBT, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB;, 2500/TAPE REEL
|
||
SGR
|
Microsemi | 功能相似 | TO-257 |
Discrete, High Performance IGBT, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB;, 2500/TAPE REEL
|
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