Technical parameters/drain source resistance: 2.7 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: -20.0 V
Technical parameters/breakdown voltage of gate source: ±6.00 V
Technical parameters/Continuous drain current (Ids): -350 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-89-3
External dimensions/length: 1.7 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SC-89-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1013X-T1-GE3
|
VISHAY | 类似代替 | SC-89-3 |
TRANSISTOR 350mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 3Pin, FET General Purpose Small Signal
|
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