Technical parameters/dissipated power: 236mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 380pF @10V(Vds)
Technical parameters/dissipated power (Max): 236mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1058X-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 20V SC89
|
|||
SI1058X-T1-GE3
|
Vishay Siliconix | 完全替代 | SC-89-6 |
MOSFET N-CH 20V SC89
|
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