Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 1.18A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 480pF @6V(Vds)
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 236mW (Ta)
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/packaging: SC-89-6
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1065X-T1-E3
|
Vishay Semiconductor | 类似代替 | SC-89 |
MOSFET P-CH 12V 1.18A SOT563F
|
||
SI1065X-T1-E3
|
Vishay Siliconix | 类似代替 | SC-89-6 |
MOSFET P-CH 12V 1.18A SOT563F
|
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