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Model SI1410EDH-T1-E3
Description N Channel MOSFET, 8V to 25V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-363
Delivery time
Packaging method
Standard packaging quantity 1
2.43  yuan 2.43yuan
5+:
$ 3.2859
25+:
$ 3.0425
50+:
$ 2.8721
100+:
$ 2.7991
500+:
$ 2.7504
2500+:
$ 2.6896
5000+:
$ 2.6652
10000+:
$ 2.6287
Quantity
5+
25+
50+
100+
500+
Price
$3.2859
$3.0425
$2.8721
$2.7991
$2.7504
Price $ 3.2859 $ 3.0425 $ 2.8721 $ 2.7991 $ 2.7504
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9577) Minimum order quantity(5)
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Technical parameters/drain source resistance: 70.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.56 W

Technical parameters/drain source voltage (Vds): 20.0 V

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 3.70 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SOT-363

External dimensions/length: 2.05 mm

External dimensions/width: 1.25 mm

External dimensions/height: 0.9 mm

External dimensions/packaging: SOT-363

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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