Technical parameters/dissipated power: 170mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/dissipated power (Max): 170mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/packaging: SOT-563
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1067X-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET 20V 1.06A 0.0236W 150mohms @ 4.5V
|
|||
SI1071X-T1-E3
|
Vishay Siliconix | 功能相似 | SC-89-6 |
MOSFET 30V 0.96A 0.236W 167mohms @ 10V
|
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