Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 950mW (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -2.20 A
Technical parameters/dissipated power (Max): 950mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Intertechnology | 类似代替 | SOT-363-6 |
SI1473DH-T1-GE3 P-channel MOSFET Transistor, 2.3A, 30V, 6Pin SOT-363
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