Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 320 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 270 mW
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 660 mA
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70
External dimensions/length: 2.2 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6321C
|
Fairchild | 功能相似 | SC-70-6 |
双路场效应管, MOSFET, 互补N与P沟道, 25 V, 500 mA, 0.45 ohm, SC-70, 表面安装
|
||
FDG6321C
|
ON Semiconductor | 功能相似 | SOT-363-6 |
双路场效应管, MOSFET, 互补N与P沟道, 25 V, 500 mA, 0.45 ohm, SC-70, 表面安装
|
||
SI1555DL-T1-GE3
|
VISHAY | 功能相似 | SC-70 |
TRANSISTOR 660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal
|
||
|
SI1555DL-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-363-6 |
TRANSISTOR 660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal
|
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