Technical parameters/drain source resistance: 0.021 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Input capacitance (Ciss): 725pF @6V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1450DH-T1-E3
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET N-CH 8V 4.53A 6Pin SC-70 T/R
|
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