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Model SI2307BDS-T1-E3
Description VISHAY SI2307BDS-T1-E3 Field effect transistor, MOSFET, P-channel, 30V V (BR) DSS
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.29  yuan 1.29yuan
5+:
$ 1.7361
25+:
$ 1.6075
50+:
$ 1.5175
100+:
$ 1.4789
500+:
$ 1.4532
2500+:
$ 1.4210
5000+:
$ 1.4082
10000+:
$ 1.3889
Quantity
5+
25+
50+
100+
500+
Price
$1.7361
$1.6075
$1.5175
$1.4789
$1.4532
Price $ 1.7361 $ 1.6075 $ 1.5175 $ 1.4789 $ 1.4532
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5296) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.063 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 750 mW

Technical parameters/drain source voltage (Vds): -30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): -3.20 A, -2.50 A

Technical parameters/Input capacitance (Ciss): 380pF @15V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 750 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/length: 3.04 mm

External dimensions/height: 1.02 mm

External dimensions/packaging: SOT-23

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Vishay Intertechnology 类似代替 SOT-23-3
Trans MOSFET P-CH 30V 2.5A 3Pin TO-236 T/R
PDF
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Vishay Semiconductor 类似代替 SOT-23-3
Trans MOSFET P-CH 30V 2.5A 3Pin TO-236 T/R
PDF

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