Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: ±20.0 V
Technical parameters/breakdown voltage of gate source: ±6.00 V
Technical parameters/Continuous drain current (Ids): 600 mA
Technical parameters/rated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1016X-T1
|
Vishay Semiconductor | 功能相似 | SOT-563 |
Small Signal Field-Effect Transistor, 0.485A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-89, 6 PIN
|
||
SI1016X-T1-GE3
|
Vishay Intertechnology | 完全替代 | SC-89-6 |
TRANSISTOR 485mA, 20V, 2Channel, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6Pin, FET General Purpose Small Signal
|
||
SI1016X-T1-GE3
|
Vishay Semiconductor | 完全替代 | SC-89 |
TRANSISTOR 485mA, 20V, 2Channel, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6Pin, FET General Purpose Small Signal
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review