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Model SI1563EDH-T1-E3
Description VISHAY SI1563EDH-T1-E3 Dual channel field-effect transistor, MOSFET, dual channel, N and P channels, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 1 V
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Brand: Vishay Semiconductor
Packaging SC-70
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9271) Minimum order quantity(1)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.22 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 570 mW

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: ±20.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 1.13 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70

External dimensions/packaging: SC-70

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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