Technical parameters/drain source resistance: 65 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/product series: SI3443DV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -4.40 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3443T1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
ON SEMICONDUCTOR NTGS3443T1G 晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
|
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