Technical parameters/dissipated power: 1.25W (Ta), 1.5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 305pF @15V(Vds)
Technical parameters/dissipated power (Max): 1.25W (Ta), 1.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3454ADV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.048Ω; ID 3.4A; TSOP-6; PD 1.14W; VGS +/-20V
|
||
SI3454ADV-T1-GE3
|
Vishay Intertechnology | 类似代替 | TSOP-6 |
MOSFET N-CH 30V 3.4A 6TSOP
|
||
SI3454CDV-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 4.2A 6TSOP
|
|||
SI3454CDV-T1-E3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
MOSFET N-CH 30V 4.2A 6TSOP
|
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