Technical parameters/dissipated power: 2.5W (Ta), 5W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1280pF @10V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4136DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET Transistor, N Channel, 46A, 20V, 0.00155Ω, 10V, 1V
|
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