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Model SI4004DY-T1-GE3
Description NChannel 20 V (D-S) MOSFET N-Channel 20 V (D-S) MOSFET
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Brand: VISHAY
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5516) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 11A

Technical parameters/rise time: 12 ns

Technical parameters/Input capacitance (Ciss): 1280pF @10V(Vds)

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SOIC

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4136DY-T1-GE3 SI4136DY-T1-GE3 Vishay Semiconductor 功能相似 SOIC-8
MOSFET Transistor, N Channel, 46A, 20V, 0.00155Ω, 10V, 1V
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